650 V Gen 3 Power SiC Merged PIN Schottky Diode, 2 A image

650 V Gen 3 Power SiC Merged PIN Schottky Diode, 2 A

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Minimum creepage distance 3.2 mm guaranteed by design
Comparative Tracking Index: CTI ≥ 600
High CTI molding compound provides excellent electrical insulation at relevant working voltages
Positive VF temperature coefficient for easy paralleling
Virtually no recovery tail and no switching losses
Temperature invariant switching behavior
175 °C maximum operating junction temperature
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
MPS structure for high ruggedness to forward current surge events
Meets JESD 201 class 2 whisker test

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Vishay Intertechnology Gen 3 650 V and 1200 V SiC Schottky Diodes Increase Efficiency While Enhancing Electrical Insulation

Vishay Intertechnology Gen 3 650 V and 1200 V SiC Schottky Diodes Increase Efficiency While Enhancing Electrical Insulation

Press Release|2025-07-09

MALVERN, Pa. — July 9, 2025 — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced three new Gen 3 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the compact, low profile SlimSMA HV (DO-221AC) package. Featuring a merged PIN Schottky (MPS) design and minimum creepage distance of 3.2 mm, the 1 A VS-3C01EJ12-M3 and 2 A VS-3C02EJ07-M3 and VS-3C02EJ12-M3 combine low capacitive charge with temperature-invariant switching behavior to increase efficiency in high speed, hard-switching power designs.

Gen 3 650-V- und 1200-V-SiC-Schottky-Dioden von Vishay Intertechnology erhöhen den Wirkungsgrad und verbessern die elektrische Isolation

Gen 3 650-V- und 1200-V-SiC-Schottky-Dioden von Vishay Intertechnology erhöhen den Wirkungsgrad und verbessern die elektrische Isolation

Press Release|2025-07-09

Malvern, Pennsylvania (USA) – 9. Juli 2025 – Vishay Intertechnology, Inc. (NYSE: VSH) hat heute drei neue Gen 3-Siliziumkardid (SiC) Schottky-Dioden mit 650 V und 1200 V im kompakten, flachen SlimSMA HV (DO-221AC)-Gehäuse vorgestellt. Mit einem Merged PIN Schottky (MPS)-Design und einer Mindestkriechstrecke von 3,2 mm vereinen die 1-A-Diode VS-3C01EJ12-M3 und die 2-A-Dioden VS-3C02EJ07-M3 and VS-3C02EJ12-M3 eine geringe kapazitive Ladung mit einem temperaturunabhängigen Schaltverhalten, um den Wirkungsgrad in schnellen, hart schaltenden Stromversorgungsdesigns zu erhöhen.