650 V Power SiC Gen 3 Merged PIN Schottky Diode, 10 A

Applications

• Creepage and clearance distance 2.8 mm minimum
• Very low profile – typical height of 1.3 mm
• Majority carrier diode using Schottky technology on SiC wide band gap material
• Improved VF and efficiency by thin wafer technology
• Positive VF temperature coefficient for easy paralleling
• Virtually no recovery tail and no switching losses
• Temperature invariant switching behavior
• 175 °C maximum operating junction temperature
• MPS structure for high ruggedness to forward current surge events
• Meets JESD 201 class 2 whisker test
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C