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Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A
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Features / Applications
Features
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
Applications
Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
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VFT1045C-M3, Schottky Diodes | Vishay
