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Dual High-Voltage Trench MOS Barrier Schottky Rectifier image

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Product Details

Features

  • Trench MOS Schottky technology
  • Low power losses, high efficiency
  • Low forward voltage drop
  • High forward surge capability
  • High frequency operation
  • Solder bath temperature 275 °C max. 10 s, perJESD 22-B106

Applications

  • For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.

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