
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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Features
- Trench MOS Schottky technology
- Low power losses, high efficiency
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Solder bath temperature 275 °C max. 10 s, perJESD 22-B106
Applications
- For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.
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