Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A image

Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A

Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A

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Product Details

Features

Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Solder bath temperature 275 °C max. 10 s, per JESD 22-B106

Applications

For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.

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