Dual High Voltage Trench MOS Barrier Schottky Rectifier image

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Dual High Voltage Trench MOS Barrier Schottky Rectifier

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Product Details

Features

Trench MOS Schottky technology
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Solder dip 275 °C max. 10 s, per JESD 22-B106

Applications

For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.

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