0.45 mΩ, Integrated OR-ing Switch With OR-ing Controller, Lossless Current Sense, and Temperature Report

Applications

• High efficiency
• Integrated 0.45 mΩ n-channel current sense MOSFET
• Lossless current sense without shunt resistor
• Compact
• Integrated current sensing and reporting circuits
• Integrated OR-ing control and OR-ing FET driver
• Versatile
• Guaranteed precise current reporting, ± 2 % for ≥ 10 A Load current. IMON offset is ± 10 µA at 0.5 A load current
• Can be paralleled for different power ranges
• Device temperature reporting through TMON. Highest temperature reported when multiple TMON pins are connected together
• Protection and alert
• Fast response to reverse condition, 200 ns/typ. OR-ing FET off time
• Reverse detection indicated pulling COMM1 low
• TMON pulled high, alert junction temperature is higher than 120 °C or internal charge pump UVLO