Thick Film Chip Resistors, Industrial, High Power, Aluminum Nitride Substrate

Features

• Thick film resistive element on an aluminum nitride (AlN) substrates
• Very high thermal conductivity in a small package size
• Termination: tin / lead wraparound termination over nickel barrier. Also available with lead (Pb)-free wraparound terminations
• Capability to develop specific reliability programs designed to customer requirements
• Operating temperature range: -65 °C to +155 °C
• High frequency performance to 6 GHz