1200 V Gen 3 Power SiC Merged PIN Schottky Diode, 1 A

Applications

• Minimum creepage distance 3.2 mm guaranteed by design
• Comparative Tracking Index: CTI ≥ 600
• High CTI molding compound provides excellent electrical insulation at relevant working voltages
• Positive VF temperature coefficient for easy paralleling
• Virtually no recovery tail and no switching losses
• Temperature invariant switching behavior
• 175 °C maximum operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• MPS structure for high ruggedness to forward current surge events
• Meets JESD 201 class 2 whisker test