High Brightness LED, Ø 5 mm Untinted Non-Diffused Package

Applications

• Untinted non-diffused lens
• Utilizing ultrabright AlInGaP technology
• Very high luminous intensity
• Very small emission angle
• High operating temperature: Tj (chip junction temperature) up to 125°C for AlInGaP devices
• Luminous intensity and color categorized for each packing unit
• ESD-withstand voltage: Up to 2 kV according to JESD22-A114-B
• AEC-Q101 qualified