SOT-227 Silicon Carbide Single Phase Bridge, 50 A
SOT-227 Silicon Carbide Single Phase Bridge, 50 A
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Product Details
Features
- Virtually no recovery tail and no switching losses
- Majority carrier diode using Schottky technology on SiC wide band gap material
- Improved VF and efficiency by thin wafer technology
- High speed switching, low switching losses
- Positive temperature coefficient, for easy paralleling
- Electrically isolated base plate
- Large creepage distance between terminal
- Simplified mechanical designs, rapid assembly
- Designed and qualified for industrial level
- UL approved file E78996
Applications
- Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness.
- Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavior.
- Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters
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