SOT-227 Silicon Carbide Schottky Barrier Diode, 650 V, 80 A
SOT-227 Silicon Carbide Schottky Barrier Diode, 650 V, 80 A
Download Datasheet
Product Details
Features
- Virtually no recovery tail and no switching losses
- Majority carrier diode using Schottky technology on SiC wide band gap material
- Improved VF and efficiency by thin wafer technology
- High speed switching, low switching losses
- Positive temperature coefficient, for easy paralleling
- Electrically isolated base plate
- Large creepage distance between terminal
- Simplified mechanical designs, rapid assembly
- Designed and qualified for industrial level
- UL approved file E78996
Applications
- Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness.
- Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavior.
- Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters
Documents
Product Series
Narrow by Doc Type:Showing
0-0
of 0| No documents found. | ||
Showing
0-0
of 0Tools
Showing
0-0
of 0| No design tools found. | ||
Showing
0-0
of 0