Insulated Gate Bipolar Transistor (Trench IGBT), 80 A image

Insulated Gate Bipolar Transistor (Trench IGBT), 80 A

Insulated Gate Bipolar Transistor (Trench IGBT), 80 A

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Product Details

Features

Trench IGBT technology
Positive VCE(on) temperature coefficient
Square RBSOA
10 µs short circuit capability
HEXFRED® low Qrr, low switching energy
TJ maximum = 150 °C
Fully isolated package
Very low internal inductance (≤ 5 nH typical)
Industry standard outline
UL approved file E78996

Applications

Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating
Easy to assemble and parallel
Direct mounting to heatsink
Plug-in compatible with other SOT-227 packages
Low EMI, requires less snubbing

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