Insulated Gate Bipolar Transistor (Ultrafast IGBT), 100 A image

Insulated Gate Bipolar Transistor (Ultrafast IGBT), 100 A

Insulated Gate Bipolar Transistor (Ultrafast IGBT), 100 A

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Product Details

Features

Trench IGBT high speed
Square RBSOA
HEXFRED® low Qrr, low switching energy
Positive VCE(on) temperature coefficient
Fully isolated package
Very low internal inductance (≤ 5 nH typical)
Industry standard outline
UL approved file E78996

Applications

Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating
Easy to assemble and parallel
Direct mounting on heatsink
Plug-in compatible with other SOT-227 packages
Low EMI, requires less snubbing

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