Insulated Gate Bipolar Transistor (Trench IGBT), 600 V, 600 A
Insulated Gate Bipolar Transistor (Trench IGBT), 600 V, 600 A
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Product Details
Features
- High speed trench gate field-stop IGBT positive temperature coefficient
- TJ maximum = 175 °C
- FRED Pt® anti-parallel diodes with ultrasoft reverse recovery
- Fully isolated package
- Very low internal inductance (≤ 5 nH typical)
- Industry standard outline
- UL approved file E78996
Applications
- Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating
- Easy to assemble and safe paralleling
- Direct mounting to heatsink
- Plug-in compatible with other SOT-227 packages
- Lower conduction losses and switching losses
- Low EMI, requires less snubbing
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