DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology

Features

• 1200 V IGBT trench and field stop technology with positive temperature coefficient
• Low switching losses
• Maximum junction temperature 175 °C
• 10 µs short circuit capability
• Low inductance case
• HEXFRED® antiparallel and series diodes with soft reverse recovery
• Isolated copper baseplate using DCB (Direct Copper Bonding) technology
• Speed 4 kHz to 30 kHz
• Direct mounting to heatsink