Silicon NPN Phototransistor

Features

• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 20°
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC