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Silicon NPN Phototransistor
Silicon NPN Phototransistor
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Features
Package type: leaded
Package form: T-1
Dimensions (in mm): Ø 3
High photo sensitivity
High radiant sensitivity
Suitable for visible and near infrared radiation
Fast response times
Angle of half sensitivity: ϕ = ± 25°
Applications
Detector in electronic control and drive circuits
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BPW85, BPW85A, BPW85B, BPW85C, Phototransistors | Vishay
