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Silicon NPN Phototransistor
Silicon NPN Phototransistor
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Features
Package type: leaded
Package form: T-¾
Dimensions (in mm): Ø 1.8
High photo sensitivity
High radiant sensitivity
Suitable for visible and near infrared radiation
Fast response times
Angle of half sensitivity: ϕ = ± 12°
Applications
Detector in electronic control and drive circuits
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BPW17N, Phototransistors | Vishay
