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BPV11, Photodiodes | Vishay
Silicon NPN Phototransistor
Silicon NPN Phototransistor
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Packaging Information
Features
Package type: leaded
Package form: T-1¾
Dimensions (in mm): Ø 5
High photo sensitivity
High radiant sensitivity
Suitable for visible and near infrared radiation
Fast response times
Angle of half sensitivity: ϕ = ± 15°
Base terminal connected
Applications
Detector for industrial electronic circuitry, measurement and control
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