N-Channel 20 V (D-S) MOSFET

Features

• TrenchFET® Gen IV power MOSFET
• Less than 1.1 mΩ in a package footprint of 10.89 mm2
• 2.5 V rated RDS(on)
• Optimized Qg, Qgd, and Qgd/Qgs ratio reduce switching related power loss
• 100 % Rg and UIS tested