Dual N-Channel 30 V (D-S) MOSFET

Features

• TrenchFET® Gen IV power MOSFET
• High side and low side MOSFETs form optimized combination for 50 % duty cycle
• Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching
• 100 % Rg and UIS tested